BAS16LTH-G3-08
Vishay General Semiconductor - Diodes Division
型号:
BAS16LTH-G3-08
封装:
DFN1006-2A
批次:
-
数据手册:
描述:
DIODE GP 100V 250MA DFN1006-2A
购买数量:
库存 : 10669
最小起订量: 1 最小递增量: 1
数量
单价
1
0.2945
10
0.2052
100
0.100035
500
0.083448
1000
0.057988
2000
0.050255
5000
0.046616
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Vishay General Semiconductor - Diodes Division |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | Automotive, AEC-Q101 |
| Package | Tape & Reel (TR) |
| Technology | Standard |
| Mounting Type | Surface Mount |
| Package / Case | 0402 (1006 Metric) |
| Product Status | Active |
| Base Product Number | BAS16 |
| Capacitance @ Vr, F | 0.36pF @ 0V, 1MHz |
| Supplier Device Package | DFN1006-2A |
| Reverse Recovery Time (trr) | 4 ns |
| Current - Reverse Leakage @ Vr | 1 µA @ 100 V |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Average Rectified (Io) | 250mA |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
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