APTM100H80FT1G

Microsemi Corporation

型号:

APTM100H80FT1G

封装:

SP1

批次:

-

数据手册:

描述:

MOSFET 4N-CH 1000V 11A SP1

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Microsemi Corporation
Series -
Package Bulk
Technology MOSFET (Metal Oxide)
FET Feature -
Power - Max 208W
Configuration 4 N-Channel (Half Bridge)
Mounting Type Chassis Mount
Package / Case SP1
Product Status Obsolete
Vgs(th) (Max) @ Id 5V @ 1mA
Base Product Number APTM100
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 960mOhm @ 9A, 10V
Supplier Device Package SP1
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Drain to Source Voltage (Vdss) 1000V (1kV)
Input Capacitance (Ciss) (Max) @ Vds 3876pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A