APTC80H29T1G
Microsemi Corporation
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产品信息
参数信息
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| Mfr | Microsemi Corporation |
| Series | - |
| Package | Bulk |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Power - Max | 156W |
| Configuration | 4 N-Channel (Half Bridge) |
| Mounting Type | Chassis Mount |
| Package / Case | SP1 |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Base Product Number | APTC80 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 7.5A, 10V |
| Supplier Device Package | SP1 |
| Gate Charge (Qg) (Max) @ Vgs | 90nC @ 10V |
| Drain to Source Voltage (Vdss) | 800V |
| Input Capacitance (Ciss) (Max) @ Vds | 2254pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 15A |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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