APT35GP120B2D2G
Microchip Technology
型号:
APT35GP120B2D2G
封装:
T-MAX™ [B2]
批次:
-
数据手册:
-
描述:
IGBT PT COMBI 1200V 35A TO-247
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Microchip Technology |
| Series | POWER MOS 7® |
| Package | Tube |
| IGBT Type | PT |
| Input Type | Standard |
| Gate Charge | 150 nC |
| Power - Max | 540 W |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
| Product Status | Active |
| Test Condition | 800V, 35A, 5Ohm, 15V |
| Switching Energy | 1mJ (on), 1.185mJ (off) |
| Base Product Number | APT35GP120 |
| Td (on/off) @ 25°C | 14ns/99ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | T-MAX™ [B2] |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 35A |
| Reverse Recovery Time (trr) | 85 ns |
| Current - Collector (Ic) (Max) | 96 A |
| Current - Collector Pulsed (Icm) | 140 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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