AIMW120R045M1XKSA1
Infineon Technologies
型号:
AIMW120R045M1XKSA1
封装:
PG-TO247-3
批次:
-
数据手册:
-
描述:
SICFET N-CH 1200V 52A TO247-3
购买数量:
库存 : 242
最小起订量: 1 最小递增量: 1
数量
单价
1
23.484
10
20.87245
100
18.255485
500
15.577986
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q101, CoolSiC™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | +20V, -7V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.7V @ 10mA |
| Base Product Number | AIMW120 |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 20A, 15V |
| Power Dissipation (Max) | 228W (Tc) |
| Supplier Device Package | PG-TO247-3 |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 15 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2130 pF @ 800 V |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
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