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2SK3564(STA4,Q,M)

Toshiba Semiconductor and Storage

型号:

2SK3564(STA4,Q,M)

封装:

TO-220SIS

批次:

-

数据手册:

-

描述:

MOSFET N-CH 900V 3A TO220SIS

购买数量:

库存 : 60

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    1.482

  • 10

    1.32145

  • 100

    1.03056

  • 500

    0.851371

  • 1000

    0.672125

  • 2000

    0.627323

  • 5000

    0.595954

  • 10000

    0.573553

请发送询价,我们将立即回复。

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series π-MOSIV
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Base Product Number 2SK3564
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 4.3Ohm @ 1.5A, 10V
Power Dissipation (Max) 40W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Drain to Source Voltage (Vdss) 900 V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)