2SK2967(F)

Toshiba Semiconductor and Storage

型号:

2SK2967(F)

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封装:

TO-3P(N)

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描述:

MOSFET N-CH 250V 30A TO3P

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Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tray
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.5V @ 1mA
Base Product Number	2SK2967
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	68mOhm @ 15A, 10V
Power Dissipation (Max)	150W (Tc)
Supplier Device Package	TO-3P(N)
Gate Charge (Qg) (Max) @ Vgs	132 nC @ 10 V
Drain to Source Voltage (Vdss)	250 V
Input Capacitance (Ciss) (Max) @ Vds	5400 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	30A (Ta)