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2SJ668(TE16L1,NQ)

Toshiba Semiconductor and Storage

型号:

2SJ668(TE16L1,NQ)

封装:

PW-MOLD

批次:

-

数据手册:

描述:

MOSFET P-CHANNEL 60V 5A PW-MOLD

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series U-MOSIII
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Obsolete
Vgs(th) (Max) @ Id 2V @ 1mA
Base Product Number 2SJ668
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 170mOhm @ 2.5A, 10V
Power Dissipation (Max) 20W (Tc)
Supplier Device Package PW-MOLD
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)